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1/12 february 2004 new datasheet according to pcn dsg/ct/2c13 marking: p80nf55-06 @ b80nf55-06 @ p80nf55-06 @ stb80nf55-06 stb80nf55-06-1 stp80nf55-06 stp80nf55-06fp n-channel 55v - 0.005 ? - 80a to-220/to-220fp/i 2 pak/d2pak stripfet? ii power mosfet typical r ds (on) = 0.005 ? exceptional dv/dt capability 100% avalanche tested application oriented characterization surface-mounting d 2 pak (to-263) power package in tube (no suffix) or in tape & reel (suffix ?t4?) description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications high-efficiency dc-dc converters ups and motor control dc-dc converters automotive environment type v dss r ds(on) i d stb80nf55-06/-1 stp80nf55-06 stp80nf55-06fp 55 v 55 v 55 v <0.0065 ? <0.0065 ? <0.0065 ? 80 a 80 a 60 a internal schematic diagram absolute maximum ratings ( ?) pulse width limited by safe operating area. (1) i sd 80a, di/dt 400a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 40a, v dd = 35v symbol parameter value unit stb80nf55-06/-1 stp80nf55-06 stp80nf55-06fp v ds drain-source voltage (v gs = 0) 55 v v dgr drain-gate voltage (r gs = 20 k ? ) 55 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 80 60 a i d drain current (continuous) at t c = 100c 80 42 a i dm ( ?) drain current (pulsed) 320 240 a p tot total dissipation at t c = 25c 300 45 w derating factor 2 0.30 w/c dv/dt (1) peak diode recovery voltage slope 7 v/ns e as (2) single pulse avalanche energy 1.3 j v iso insulation withstand voltage (dc) ------ 2500 v t stg storage temperature -55 to 175 c t j operating junction temperature 1 2 3 1 2 3 1 2 3 to-220 to-220fp 1 3 d 2 pak to-263 (suffix ?t4?) i 2 pak to-262 (suffix ?-1?)
stb80nf55-06/-1 stp80nf55-06 stp80nf55-06fp 2/12 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic d 2 pak/i 2 pak/ to-220 to-220fp rthj-case thermal resistance junction-case max 0.5 3.33 c/w rthj-amb t l thermal resistance junction-ambient maximum lead temperature for soldering purpose max 62.5 300 c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 55 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 234v r ds(on) static drain-source on resistance v gs = 10 v i d = 40 a 0.005 0.0065 ? symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d =40 a 150 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 4400 1020 350 pf pf pf
3/12 stb80nf55-06/-1 stp80nf55-06 stp80nf55-06fp switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ?) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 27 v i d = 40 a r g =4.7 ? v gs = 10 v (resistive load, figure 3) 27 155 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 44 v i d = 80 a v gs = 10v 142 29 60.5 193 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 27 v i d = 40 a r g =4.7 ?, v gs = 10 v (resistive load, figure 3) 125 65 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 80 320 a a v sd (*) forward on voltage i sd = 80 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a di/dt = 100a/s v dd = 35 v t j = 150c (see test circuit, figure 5) 100 0.32 6.5 ns c a electrical characteristics (continued) safe operating area for to-220fp safe operating area for to-220
stb80nf55-06/-1 stp80nf55-06 stp80nf55-06fp 4/12 thermal impedance thermal impedance for to-220fp output characteristics transfer characteristics transconductance static drain-source on resistance
5/12 stb80nf55-06/-1 stp80nf55-06 stp80nf55-06fp gate charge vs gate-source voltage capacitance variations normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage temperature
stb80nf55-06/-1 stp80nf55-06 stp80nf55-06fp 6/12 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/12 stb80nf55-06/-1 stp80nf55-06 stp80nf55-06fp dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.016 v2 0 8 0 8 d 2 pak mechanical data
stb80nf55-06/-1 stp80nf55-06 stp80nf55-06fp 8/12 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data
9/12 stb80nf55-06/-1 stp80nf55-06 stp80nf55-06fp dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.40 0.645 l3 28.90 1.137 l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 dia 3.75 3.85 0.147 0.151 to-220 mechanical data
stb80nf55-06/-1 stp80nf55-06 stp80nf55-06fp 10/12 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data
11/12 stb80nf55-06/-1 stp80nf55-06 stp80nf55-06fp dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r 50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix ?t4?)* d 2 pak footprint tape mechanical data
stb80nf55-06/-1 stp80nf55-06 stp80nf55-06fp 12/12 i nformation furnished is believed to be accurate and reliable. ho wever, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is registered trademark of stmicroelectronics all other names are the property of their respective owners. ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco -singapore - spain - sweden - switzerland - united kingdom - united states. www.st.com

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